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1 IPD65R1K0CE rev.2.0,2016-02-26 final data sheet dpak mosfet 650vcoolmosacepowertransistor coolmos?isarevolutionarytechnologyforhighvoltagepower mosfets,designedaccordingtothesuperjunction(sj)principleand pioneeredbyinfineontechnologies.coolmos?ceisa price-performanceoptimizedplatformenablingtotargetcostsensitive applicationsinconsumerandlightingmarketsbystillmeetinghighest efficiencystandards.thenewseriesprovidesallbenefitsofafast switchingsuperjunctionmosfetwhilenotsacrificingeaseofuseand offeringthebestcostdownperformanceratioavailableonthemarket. features ?extremelylowlossesduetoverylowfomrdson*qgandeoss ?veryhighcommutationruggedness ?easytouse/drive ?pb-freeplating,halogenfreemoldcompound ?qualifiedforstandardgradeapplications applications pcsilverbox,adapters,lcd&pdptvandindoorlighting pleasenote:formosfetparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. table1keyperformanceparameters parameter value unit v ds @ t j,max 700 v r ds(on),max 1000 m w i d.typ 7.2 a q g.typ 15.3 nc i d,pulse 12 a e oss @400v 1.5 j type/orderingcode package marking relatedlinks IPD65R1K0CE pg-to 252 65s1k0ce see appendix a tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
2 650vcoolmosacepowertransistor IPD65R1K0CE rev.2.0,2016-02-26 final data sheet tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 appendix a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
3 650vcoolmosacepowertransistor IPD65R1K0CE rev.2.0,2016-02-26 final data sheet 1maximumratings at t j =25c,unlessotherwisespecified table2maximumratings values min. typ. max. parameter symbol unit note/testcondition continuous drain current 1) i d - - - - 7.2 4.6 a t c =25c t c =100c pulsed drain current 2) i d,pulse - - 12 a t c =25c avalanche energy, single pulse e as - - 50 mj i d =1a; v dd =50v; see table 10 avalanche energy, repetitive e ar - - 0.15 mj i d =1a; v dd =50v; see table 10 avalanche current, repetitive i ar - - 1.0 a - mosfet dv/dt ruggedness dv/dt - - 50 v/ns v ds =0...480v gate source voltage (static) v gs -20 - 20 v static; gate source voltage (dynamic) v gs -30 - 30 v ac (f>1 hz) power dissipation (to252) p tot - - 68 w t c =25c storage temperature t stg -55 - 150 c - operating junction temperature t j -55 - 150 c - continuous diode forward current i s - - 5.1 a t c =25c diode pulse current 2) i s,pulse - - 12 a t c =25c reverse diode dv/dt 3) dv/dt - - 15 v/ns v ds =0...400v, i sd <= i s , t j =25c see table 8 maximum diode commutation speed di f /dt - - 500 a/ m s v ds =0...400v, i sd <= i s , t j =25c see table 8 1) limited by t j max . maximum duty cycle d=0.50 2) pulse width t p limited by t j,max 3) identicallowsideandhighsideswitchwithidentical r g tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
4 650vcoolmosacepowertransistor IPD65R1K0CE rev.2.0,2016-02-26 final data sheet 2thermalcharacteristics table3thermalcharacteristics values min. typ. max. parameter symbol unit note/testcondition thermal resistance, junction - case (to252) r thjc - - 1.85 c/w - thermal resistance, junction - ambient r thja - - 62 c/w leaded soldering temperature, wavesoldering only allowed at leads t sold - - 260 c 1.6mm (0.063 in.) from case for 10s tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
5 650vcoolmosacepowertransistor IPD65R1K0CE rev.2.0,2016-02-26 final data sheet 3electricalcharacteristics at t j =25c,unlessotherwisespecified table4staticcharacteristics values min. typ. max. parameter symbol unit note/testcondition drain-source breakdown voltage v (br)dss 650 - - v v gs =0v, i d =1ma gate threshold voltage v (gs)th 2.5 3.0 3.5 v v ds = v gs , i d =0.2ma zero gate voltage drain current i dss - - - 10 1 - m a v ds =650, v gs =0v, t j =25c v ds =650, v gs =0v, t j =150c gate-source leakage current i gss - - 100 na v gs =20v, v ds =0v drain-source on-state resistance r ds(on) - - 0.86 2.22 1.00 - w v gs =10v, i d =1.5a, t j =25c v gs =10v, i d =1.5a, t j =150c gate resistance r g - 5.5 - w f =1mhz,opendrain table5dynamiccharacteristics values min. typ. max. parameter symbol unit note/testcondition input capacitance c iss - 328 - pf v gs =0v, v ds =100v, f =1mhz output capacitance c oss - 23 - pf v gs =0v, v ds =100v, f =1mhz effective output capacitance, energy related 1) c o(er) - 14 - pf v gs =0v, v ds =0...480v effective output capacitance, time related 2) c o(tr) - 58.5 - pf i d =constant, v gs =0v, v ds =0...480v turn-on delay time t d(on) - 6.6 - ns v dd =400v, v gs =13v, i d =2.2a, r g =10.2 w ;seetable9 rise time t r - 5.2 - ns v dd =400v, v gs =13v, i d =2.2a, r g =10.2 w ;seetable9 turn-off delay time t d(off) - 41 - ns v dd =400v, v gs =13v, i d =2.2a, r g =10.2 w ;seetable9 fall time t f - 13.6 - ns v dd =400v, v gs =13v, i d =2.2a, r g =10.2 w ;seetable9 table6gatechargecharacteristics values min. typ. max. parameter symbol unit note/testcondition gate to source charge q gs - 1.8 - nc v dd =480v, i d =2.2a, v gs =0to10v gate to drain charge q gd - 8 - nc v dd =480v, i d =2.2a, v gs =0to10v gate charge total q g - 15.3 - nc v dd =480v, i d =2.2a, v gs =0to10v gate plateau voltage v plateau - 5.4 - v v dd =480v, i d =2.2a, v gs =0to10v 1) c o(er) isafixedcapacitancethatgivesthesamestoredenergyas c oss while v ds isrisingfrom0to80%v o(br)dss 2) c o(tr) isafixedcapacitancethatgivesthesamechargingtimeas c oss while v ds isrisingfrom0to80%v o(br)dss tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
6 650vcoolmosacepowertransistor IPD65R1K0CE rev.2.0,2016-02-26 final data sheet table7reversediodecharacteristics values min. typ. max. parameter symbol unit note/testcondition diode forward voltage v sd - 0.9 - v v gs =0v, i f =2.2a, t j =25c reverse recovery time t rr - 226 - ns v r =400v, i f =2.2a,d i f /d t =100a/s; see table 8 reverse recovery charge q rr - 1.3 - c v r =400v, i f =2.2a,d i f /d t =100a/s; see table 8 peak reverse recovery current i rrm - 9.9 - a v r =400v, i f =2.2a,d i f /d t =100a/s; see table 8 tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
7 650vcoolmosacepowertransistor IPD65R1K0CE rev.2.0,2016-02-26 final data sheet 4electricalcharacteristicsdiagrams diagram1:powerdissipation(nonfullpak) t c [c] p tot [w] 0 25 50 75 100 125 150 0 10 20 30 40 50 60 70 p tot =f( t c ) diagram2:safeoperatingarea(nonfullpak) v ds [v] i d [a] 10 0 10 1 10 2 10 3 10 -3 10 -2 10 -1 10 0 10 1 10 2 1 s 10 s 100 s 1 ms dc i d =f( v ds ); t c =25c; d =0;parameter: t p diagram3:safeoperatingarea(nonfullpak) v ds [v] i d [a] 10 0 10 1 10 2 10 3 10 -3 10 -2 10 -1 10 0 10 1 10 2 1 s 10 s 100 s 1 ms dc i d =f( v ds ); t c =80c; d =0;parameter: t p diagram4:max.transientthermalimpedance(nonfullpak) t p [s] z thjc [k/w] 10 -5 10 -4 10 -3 10 -2 10 -1 10 -2 10 -1 10 0 10 1 0.5 0.2 0.1 0.05 0.02 0.01 single pulse z thjc =f( t p );parameter: d=t p / t tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
8 650vcoolmosacepowertransistor IPD65R1K0CE rev.2.0,2016-02-26 final data sheet diagram5:typ.outputcharacteristics v ds [v] i d [a] 0 5 10 15 20 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 20 v 10 v 8 v 7 v 6 v 5.5 v 5 v 4.5 v i d =f( v ds ); t j =25c;parameter: v gs diagram6:typ.outputcharacteristics v ds [v] i d [a] 0 5 10 15 20 0 1 2 3 4 5 6 7 8 20 v 10 v 8 v 7 v 6 v 5.5 v 5 v 4.5 v i d =f( v ds ); t j =125c;parameter: v gs diagram7:typ.drain-sourceon-stateresistance i d [a] r ds(on) [ w ] 0 1 2 3 4 5 6 7 8 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5 v 5.5v 6 v 6.5 v 7 v 10 v r ds(on) =f( i d ); t j =125c;parameter: v gs diagram8:drain-sourceon-stateresistance t j [c] r ds(on) [ w ] -50 -25 0 25 50 75 100 125 150 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 1.80 2.00 98% typ r ds(on) =f( t j ); i d =1.5a; v gs =10v tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
9 650vcoolmosacepowertransistor IPD65R1K0CE rev.2.0,2016-02-26 final data sheet diagram9:typ.transfercharacteristics v gs [v] i d [a] 0 2 4 6 8 10 12 0 2 4 6 8 10 12 14 150 c 25 c i d =f( v gs ); v ds =20v;parameter: t j diagram10:typ.gatecharge q gate [nc] v gs [v] 0 4 8 12 16 0 1 2 3 4 5 6 7 8 9 10 120 v 480 v v gs =f( q gate ); i d =2.2apulsed;parameter: v dd diagram11:forwardcharacteristicsofreversediode v sd [v] i f [a] 0.0 0.5 1.0 1.5 2.0 10 -1 10 0 10 1 10 2 25 c 125 c i f =f( v sd );parameter: t j diagram12:avalancheenergy t j [c] e as [mj] 25 50 75 100 125 150 0 10 20 30 40 50 e as =f( t j ); i d =1.0a; v dd =50v tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
10 650vcoolmosacepowertransistor IPD65R1K0CE rev.2.0,2016-02-26 final data sheet diagram13:drain-sourcebreakdownvoltage t j [c] v br(dss) [v] -75 -50 -25 0 25 50 75 100 125 150 175 550 570 590 610 630 650 670 690 710 730 750 v br(dss) =f( t j ); i d =1.0ma diagram14:typ.capacitances v ds [v] c [pf] 0 100 200 300 400 500 10 0 10 1 10 2 10 3 10 4 ciss coss crss c =f( v ds ); v gs =0v; f =1mhz diagram15:typ.cossstoredenergy v ds [v] e oss [j] 0 100 200 300 400 500 0.0 0.5 1.0 1.5 2.0 e oss = f (v ds ) tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
11 650vcoolmosacepowertransistor IPD65R1K0CE rev.2.0,2016-02-26 final data sheet 5testcircuits table8diodecharacteristics table9switchingtimes table10unclampedinductiveload tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d
12 650vcoolmosacepowertransistor IPD65R1K0CE rev.2.0,2016-02-26 final data sheet 6packageoutlines figure1outlinepg-to252,dimensionsinmm/inches tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d 2.0 issue date european projection 0 4mm 2.0 scale 0 revision 01-09-2015 05 document no. z8b00003328 *) mold flash not included millimeters 4.57 (bsc) 2.29 (bsc) l4 d n h e1 e1 e e d1 l3 1.18 0.51 0.90 5.02 9.40 6.40 4.70 5.97 3 b3 a dim b2 c b c2 a1 5.00 min 2.16 0.64 0.46 0.65 0.46 0.00 0.046 0.020 0.035 0.198 0.252 0.185 0.235 0.370 1.70 1.00 5.60 5.84 6.22 6.73 1.25 10.48 0.180 (bsc) 0.090 (bsc) 3 0.067 0.220 0.039 0.230 0.265 0.049 0.245 0.413 0.197 0.085 0.025 0.018 0.026 0.018 0.000 5.50 max 2.41 0.15 1.15 0.60 0.89 0.98 inches min 0.217 max 0.006 0.095 0.035 0.024 0.045 0.039 l f6 f1 f2 f3 f4 f5 1.20 6.40 10.60 2.20 5.80 5.76 0.417 0.252 0.087 0.228 0.227 0.047
13 650vcoolmosacepowertransistor IPD65R1K0CE rev.2.0,2016-02-26 final data sheet 7appendixa table11relatedlinks ? ifxcoolmos tm cewebpage: www.infineon.com ? ifxcoolmos tm ceapplicationnote: www.infineon.com ? ifxcoolmos tm cesimulationmodel: www.infineon.com ? ifxdesigntools: www.infineon.com tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d 2.0 issue date european projection 0 4mm 2.0 scale 0 revision 01-09-2015 05 document no. z8b00003328 *) mold flash not included millimeters 4.57 (bsc) 2.29 (bsc) l4 d n h e1 e1 e e d1 l3 1.18 0.51 0.90 5.02 9.40 6.40 4.70 5.97 3 b3 a dim b2 c b c2 a1 5.00 min 2.16 0.64 0.46 0.65 0.46 0.00 0.046 0.020 0.035 0.198 0.252 0.185 0.235 0.370 1.70 1.00 5.60 5.84 6.22 6.73 1.25 10.48 0.180 (bsc) 0.090 (bsc) 3 0.067 0.220 0.039 0.230 0.265 0.049 0.245 0.413 0.197 0.085 0.025 0.018 0.026 0.018 0.000 5.50 max 2.41 0.15 1.15 0.60 0.89 0.98 inches min 0.217 max 0.006 0.095 0.035 0.024 0.045 0.039 l f6 f1 f2 f3 f4 f5 1.20 6.40 10.60 2.20 5.80 5.76 0.417 0.252 0.087 0.228 0.227 0.047
14 650vcoolmosacepowertransistor IPD65R1K0CE rev.2.0,2016-02-26 final data sheet revisionhistory IPD65R1K0CE revision:2016-02-26,rev.2.0 previous revision revision date subjects (major changes since last revision) 2.0 2016-02-26 release of final version trademarksofinfineontechnologiesag aurix?,c166?,canpak?,cipos?,coolgan?,coolmos?,coolset?,coolsic?,corecontrol?,crossave?,dave?,di-pol?,drblade?, easypim?,econobridge?,econodual?,econopack?,econopim?,eicedriver?,eupec?,fcos?,hitfet?,hybridpack?,infineon?, isoface?,isopack?,i-wafer?,mipaq?,modstack?,my-d?,novalithic?,omnitune?,optiga?,optimos?,origa?,powercode?, primarion?,primepack?,primestack?,profet?,pro-sil?,rasic?,real3?,reversave?,satric?,sieget?,sipmos?,smartlewis?, solidflash?,spoc?,tempfet?,thinq?,trenchstop?,tricore?. trademarksupdatedaugust2015 othertrademarks allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. welistentoyourcomments anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com publishedby infineontechnologiesag 81726mnchen,germany ?2016infineontechnologiesag allrightsreserved. legaldisclaimer theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.with respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. information forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestinfineon technologiesoffice( www.infineon.com ). warnings duetotechnicalrequirements,componentsmaycontaindangeroussubstances.forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. theinfineontechnologiescomponentdescribedinthisdatasheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d 2.0 issue date european projection 0 4mm 2.0 scale 0 revision 01-09-2015 05 document no. z8b00003328 *) mold flash not included millimeters 4.57 (bsc) 2.29 (bsc) l4 d n h e1 e1 e e d1 l3 1.18 0.51 0.90 5.02 9.40 6.40 4.70 5.97 3 b3 a dim b2 c b c2 a1 5.00 min 2.16 0.64 0.46 0.65 0.46 0.00 0.046 0.020 0.035 0.198 0.252 0.185 0.235 0.370 1.70 1.00 5.60 5.84 6.22 6.73 1.25 10.48 0.180 (bsc) 0.090 (bsc) 3 0.067 0.220 0.039 0.230 0.265 0.049 0.245 0.413 0.197 0.085 0.025 0.018 0.026 0.018 0.000 5.50 max 2.41 0.15 1.15 0.60 0.89 0.98 inches min 0.217 max 0.006 0.095 0.035 0.024 0.045 0.039 l f6 f1 f2 f3 f4 f5 1.20 6.40 10.60 2.20 5.80 5.76 0.417 0.252 0.087 0.228 0.227 0.047

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